CHARGE LOSS IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR (MNOS) DEVICES AT HIGH-TEMPERATURES

被引：4

作者：

DOBBS, CS ^{[1
]}

BROWN, WD ^{[1
]}

YEARGAN, JR ^{[1
]}

机构：

[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期

关键词：

D O I：

10.1016/0038-1101(83)90098-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：427 / 432

页数：6

共 15 条

[1]

HARRINGTON JJ, 1979, MICROPROCESSOR BASED

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JONES, RV ;

BROWN, WD .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :959-972

[3]

JONES RV, 1980, THESIS U ARKANSAS

[4] DISCHARGE OF MNOS STRUCTURES [J].

LUNDKVIST, L ;

LUNDSTROM, I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+

[5] DISCHARGE OF MNOS STRUCTURES AT ELEVATED-TEMPERATURES [J].

LUNDKVIST, L ;

SVENSSON, C ;

HANSSON, B .

SOLID-STATE ELECTRONICS, 1976, 19 (03) :221-227

[6]

MANNING RW, 1980, THESIS U ARKANSAS

[7] ENDURANCE AND MEMORY DECAY OF MNOS DEVICES [J].

NEUGEBAUER, CA ;

BURGESS, JF .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3182-3191

[8]

ROSS EC, 1970, RCA REV, V31, P467

[9] INTERFACE STATES AND MEMORY DECAY IN MNOS CAPACITORS [J].

SCHAUER, H ;

ARNOLD, E ;

MURAU, PC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1037-1041

[10]

WEGENER HAR, 1967, IEEE ELECTRON DEV M

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