INTERFACE STATES AND MEMORY DECAY IN MNOS CAPACITORS

被引：14

作者：

SCHAUER, H

ARNOLD, E

MURAU, PC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1037 / 1041

页数：5

共 15 条

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[7]

Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[8] NEGATIVE BIAS STRESS OF MOS DEVICES AT HIGH ELECTRIC-FIELDS AND DEGRADATION OF MNOS DEVICES [J].

JEPPSON, KO ;

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JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2004-2014

[9] DISCHARGE OF MNOS STRUCTURES [J].

LUNDKVIST, L ;

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SVENSSON, C .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+

[10] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J].

MAES, H ;

VANOVERSTRAETEN, RJ .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :282-284

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