FAST SHRINKAGE OF OXIDATION STACKING-FAULTS DURING O2/NF3 OXIDATION OF SILICON

被引：5

作者：

KIM, US

JACCODINE, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 18期

关键词：

D O I：

10.1063/1.97414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1201 / 1203

页数：3

共 11 条

[1]

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[2]

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MOSLEHI, M .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :683-685

[4]

HAYAFUJI Y, 1982, J APPL PHYS, V53, P8639, DOI 10.1063/1.330460

[5]

HILL C, 1981, SEMICONDUCTOR SILICO, P988

[6]

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KOOK, T ;

JACCODINE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :989-990

[8] THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON [J].

LIN, AM ;

DUTTON, RW ;

ANTONIADIS, DA ;

TILLER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1121-1130

[9] FAST SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON AT THE INITIAL-STAGE OF ANNEALING IN NITROGEN [J].

NISHI, K ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :516-518

[10] CHEMICALLY ENHANCED THERMAL-OXIDATION OF SILICON [J].

SCHMIDT, PF ;

JACCODINE, RJ ;

WOLOWODIUK, CH ;

KOOK, T .

MATERIALS LETTERS, 1985, 3 (5-6) :235-238

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