FAST SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON AT THE INITIAL-STAGE OF ANNEALING IN NITROGEN

被引：8

作者：

NISHI, K

ANTONIADIS, DA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：516 / 518

页数：3

共 10 条

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[2] ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION [J].

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ANTTILA, A .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :703-705

[4]

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[5] KINETICS OF GROWTH OF THE OXIDATION STACKING-FAULTS [J].

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[6] THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON [J].

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DUTTON, RW ;

ANTONIADIS, DA ;

TILLER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1121-1130

[7] EFFECTS OF PHOSPHORUS DIFFUSION ON GROWTH AND SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS [J].

NISHI, K ;

ANTONIADIS, DA .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3428-3438

[8] STACKING-FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION [J].

SHIRAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) :1-10

[9] SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON [J].

SUGITA, Y ;

SHIMIZU, H ;

YOSHINAKA, A ;

AOSHIMA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :44-46

[10] KINETICS OF SELF-INTERSTITIALS GENERATED AT THE SI/SIO2 INTERFACE [J].

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ANTONIADIS, DA ;

MATSUSHITA, Y .

APPLIED PHYSICS LETTERS, 1983, 42 (11) :961-963

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