A COMPARISON OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN A-SI P-I-N JUNCTIONS

被引：8

作者：

HOPKINSON, M

SEARLE, TM

AUSTIN, IG

RHODES, AJ

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(85)90753-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：695 / 698

页数：4

共 6 条

[1] ODMR INVESTIGATION OF RECOMBINATION IN MU-C-SI-H
DEPINNA, SP
HOMEWOOD, K
CAVENETT, BC
AUSTIN, IG
SEARLE, TM
WILLEKE, G
KINMOND, S
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : L57 - L62
[2] ELECTRO-LUMINESCENCE IN AMORPHOUS-SILICON P-I-N JUNCTIONS
NASHASHIBI, TS
AUSTIN, IG
SEARLE, TM
GIBSON, RA
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (06): : 553 - 571
[3] LUMINESCENCE PHENOMENA IN A-SI-H P-I-N JUNCTIONS
RHODES, AJ
BHAT, PK
AUSTIN, IG
SEARLE, TM
GIBSON, RA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 365 - 368
[4] EXCITATION WAVELENGTH AND INTENSITY DEPENDENCE OF LUMINESCENCE DECAY IN A-SI(H)
SHAH, J
BAGLEY, BG
ALEXANDER, FB
[J]. SOLID STATE COMMUNICATIONS, 1980, 36 (03) : 199 - 203
[5] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676
[6] RADIATIVE RECOMBINATION AT DANGLING BONDS IN A-SI-H
WILSON, BA
SERGENT, AM
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2282 - 2285