HIGH 2-DIMENSIONAL ELECTRON-MOBILITY IN SI ATOMIC-LAYER DOPED N-ALGAAS GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION

被引：3

作者：

MAKIMOTO, T

KOBAYASHI, N

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo, 180

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 5A期

关键词：

MOCVD; N-ALGAAS GAAS; 2DEG; MOBILITY; ATOMIC-LAYER DOPING;

D O I：

10.1143/JJAP.32.L648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x 10(6) cm2/V.s is obtained at 4.2 K for a sheet electron concentration of 4.8 x 10(11) cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

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页码：L648 / L649

页数：2

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