IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH-DOSE OXYGEN-IMPLANTED SILICON

被引：3

作者：

JAGER, HU

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 103卷 / 02期

关键词：

D O I：

10.1002/pssa.2211030241

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K75 / K79

页数：5

共 13 条

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