MODELING OF MOS RADIATION AND POST IRRADIATION EFFECTS

被引：10

作者：

NEAMEN, DA ^{[1
]}

机构：

[1] USAF,WEAPONS LAB,DEPT ELECTR & COMP ENGN,ALBUQUERQUE,NM 87131

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1439 / 1443

页数：5

共 17 条

[1] EXPOSURE-DOSE-RATE-DEPENDENCE FOR A CMOS-SOS MEMORY [J].

BRUCKER, GJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4056-4059

[2] RECOVERY OF DAMAGE IN RAD-HARD MOS DEVICES DURING AND AFTER IRRADIATION BY ELECTRONS, PROTONS, ALPHAS, AND GAMMA-RAYS [J].

BRUCKER, GJ ;

VANGUNTEN, O ;

STASSINOPOULOS, EG ;

SHAPIRO, P ;

AUGUST, LS ;

JORDAN, TM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4157-4161

[3]

BUCK J, 1980, 1980 GOMAC, V111, P320

[4] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J].

DERBENWICK, GF ;

SANDER, HH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2244-2247

[5] THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS [J].

DRESSENDORFER, PV ;

SODEN, JM ;

HARRINGTON, JJ ;

NORDSTROM, TV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4281-4287

[6] HOLE TRANSPORT IN MOS OXIDES [J].

HUGHES, RC ;

EERNISSE, EP ;

STEIN, HJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2227-2233

[7] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[8] RAPID ANNEALING AND CHARGE INJECTION IN AL2O3 MIS CAPACITORS [J].

MCLEAN, FB ;

BOESCH, HE ;

WINOKUR, PS ;

MCGARRITY, JM ;

OSWALD, RB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :47-55

[9] MODELING TOTAL DOSE EFFECTS IN NARROW-CHANNEL DEVICES [J].

PECKERAR, MC ;

BROWN, DB ;

LIN, HC ;

MA, DI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) :1159-1164

[10]

ROSS EC, 1969, RCA REV, V30, P366

← 1 2 →