EFFECTS OF PLATINUM SILICIDE THICKNESS AND ANNEALING TEMPERATURE ON ARSENIC REDISTRIBUTION

被引:12
作者
LEW, PW
HELMS, CR
机构
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
[2] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
关键词
D O I
10.1063/1.333908
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3418 / 3427
页数:10
相关论文
共 38 条
[1]   ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION [J].
BINDELL, JB ;
COLBY, JW ;
WONSIDLER, DR ;
POATE, JM ;
CONLEY, DK ;
TISONE, TC .
THIN SOLID FILMS, 1976, 37 (03) :441-452
[2]  
BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878
[3]   PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].
CANALI, C ;
CATELLANI, C ;
PRUDENZIATI, M ;
WADLIN, WH ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45
[4]  
CHU WK, 1977, BACKSCATTERING SPECT, P384
[5]   PLATINUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON [J].
COHEN, SS ;
PIACENTE, PA ;
GILDENBLAT, G ;
BROWN, DM .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8856-8862
[6]  
Gupta D., 1978, Thin films. Interdiffusion and reactions, P161
[7]   LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].
HIRAKI, A ;
NICOLET, MA ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&
[8]   REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES [J].
KIKUCHI, A ;
SUGAKI, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3690-3693
[9]   EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J].
LAU, SS ;
CHU, WK ;
MAYER, JW ;
TU, KN .
THIN SOLID FILMS, 1974, 23 (02) :205-213
[10]  
Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159