OXYGEN DEPTH PROFILING OF HIGH-PRESSURE DC-SPUTTERED AMORPHOUS-SILICON

被引：8

作者：

KOROPECKI, RR ^{[1
]}

ARCE, R ^{[1
]}

FERRON, J ^{[1
]}

机构：

[1] UNIV NACL LITORAL,INST DESARROLLO TECHNOL IND QUIM,RA-3000 SANTA FE,ARGENTINA

来源：

APPLIED SURFACE SCIENCE | 1986年 / 25卷 / 03期

关键词：

D O I：

10.1016/0169-4332(86)90063-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：321 / 326

页数：6

共 10 条

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[3]

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[6] OXIDATION MECHANISMS IN HIGH-PRESSURE DC-SPUTTERED A-SI FILMS [J].

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[8] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON [J].

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[9] PROPERTIES OF AMORPHOUS SI PREPARED BY RF SPUTTERING WITH A HIGH AR PRESSURE [J].

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[10] EFFECT OF OXYGEN ON THE OPTOELECTRONIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON [J].

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PAUL, W .

PHYSICAL REVIEW B, 1981, 24 (10) :5907-5912

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