DRY ETCHING OF TAPERED CONTACT HOLES USING MULTILAYER RESIST

被引：10

作者：

SAIA, RJ

GOROWITZ, B

机构：

[1] GE, Corporate Research &, Development Cent, Schenectady, NY,, USA, GE, Corporate Research & Development Cent, Schenectady, NY, USA

来源：

关键词：

D O I：

10.1149/1.2114259

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1954 / 1957

页数：4

共 12 条

[1]

BONDUR JA, 1981, ELECTROCHEMICAL SOC, P180

[2]

CRABBE E, 1983, ELECTROCHEMICAL SOC, P261

[3]

DUFFY MT, 1983, ELECTROCHEMICAL SOC, V83, P265

[4]

EMMI F, 1984, ELECTROCHEMICAL SOC, V84, P525

[5]

FLAMM DL, 1984, VLSI ELECTRONICS MIC, V8, P231

[6] RECENT DEVELOPMENTS IN 2-LEVEL RESIST TECHNOLOGY [J].

GRIFFING, BF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1423-1428

[7]

GRIFFING BF, 1981, P IEDM IEEE NEW YORK, P562

[8] PLASMA-ETCHING DURABILITY OF POLY(METHYL METHACRYLATE) [J].

HARADA, K .

LIN, BJ ;

BASSOUS, E ;

CHAO, VW ;

PETRILLO, KE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1313-1319

PEDERSON, LA .