AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CF4/H2 REACTIVE ION ETCHING RESIDUE ON SILICON

被引：16

作者：

THOMAS, JH ^{[1
]}

MU, XC ^{[1
]}

FONASH, SJ ^{[1
]}

机构：

[1] PENN STATE UNIV,CTR ELECTR MAT & DEVICES,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1149/1.2100353

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3122 / 3125

页数：4

共 17 条

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[7] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201
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[9] AN XPS STUDY OF THE INFLUENCE OF ION SPUTTERING ON BONDING IN THERMALLY GROWN SILICON DIOXIDE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 43 - 47
[10] GLOW-DISCHARGE POLYMERIZATION OF CF4/CH4 MIXTURE INVESTIGATED BY INFRARED-SPECTROSCOPY AND ESCA
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