MULTI-CHANNEL FIELD-EFFECT TRANSISTOR THEORY AND EXPERIMENT

被引:20
作者
ZULEEG, R
机构
关键词
D O I
10.1016/0038-1101(67)90138-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:559 / +
页数:1
相关论文
共 22 条
[1]   UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
DACEY, GC ;
ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08) :970-979
[2]   ULTIMATE FET STRUCTURES [J].
ESAKI, L ;
CHANG, LL .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2117-&
[3]   PHYSICAL PHENOMENON RESPONSIBLE FOR SATURATION CURRENT IN FIELD EFFECT DEVICES [J].
GROSVALET, J ;
MOTSCH, C ;
TRIBES, R .
SOLID-STATE ELECTRONICS, 1963, 6 (01) :65-67
[4]   SMALL SIGNAL PROPERTIES OF FIELD EFFECT DEVICES [J].
HAUSER, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) :605-+
[6]  
HAUSER JR, 1965, AFALTR65234 TECHN RE
[7]  
HUNTER LP, 1962, HANDBOOK SEMICONDUCT, P4
[8]  
Linvill J.G., 1961, TRANSISTORS ACTIVE C, V1st
[9]   A SIMPLE DERIVATION FIELD-EFFECT TRANSISTOR CHARACTERISTICS [J].
MIDDLEBROOK, RD .
PROCEEDINGS OF THE IEEE, 1963, 51 (08) :1146-&
[10]   EQUIVALENT CIRCUIT OF AN ARBITRARILY DOPED FIELD-EFFECT TRANSISTOR [J].
RICHER, I .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :381-+