DIFFUSION IN GAAS OF A NATIVE DEFECT TAGGED WITH DEUTERIUM

被引：8

作者：

MORROW, RA

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来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 03期

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D O I：

10.1063/1.103713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We interpret published depth profiles of deuterium in n- and p-type GaAs, following long anneals at 500°C in a gaseous deuterium atmosphere, as indicating the indiffusion of a native defect (probably VAs) and an impurity (possibly O), both tagged with deuterium. Model fits yield the 500°C diffusivity of the tagged impurity as 4×10-14 cm 2/s and the diffusivities of the tagged native defect as 3×10-15 cm2/s in n-GaAs and ∼8×10 -15 cm2/s in p-GaAs.

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页码：276 / 278

页数：3

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