TERAHERTZ FREQUENCY-RESPONSE OF AN IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODE

被引：21

作者：

SCOTT, JS

KAMINSKI, JP

WANKE, M

ALLEN, SJ

CHOW, DH

LUI, M

LIU, TY

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the room-temperature, broad-band, terahertz response of a high-speed In0.53Ga0.47As/AlAs resonant-tunneling diode from 120 GHz to 3.9 THz using the free-electron lasers at UCSB. The ''rectified'' response is measured with a conventional probe station by using the tungsten probe tip as a whisker antenna. Normalizing the rectified response in the resonant-tunneling regime with the off-resonant response we remove the extrinsic frequency dependence controlled by the antenna and the RC time constant and measure an intrinsic relaxation time.

引用

页码：1995 / 1997

页数：3

共 12 条

[1]

ALLEN S, COMMUNICATION

[2] EFFECT OF QUASIBOUND-STATE LIFETIME ON THE OSCILLATION POWER OF RESONANT TUNNELING DIODES [J].