OXIDE BARRIERS TO THE FORMATION OF REFRACTORY SILICIDES

被引:22
作者
SILVERSMITH, DJ
RATHMAN, DD
MOUNTAIN, RW
机构
关键词
D O I
10.1016/0040-6090(82)90147-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:413 / 419
页数:7
相关论文
共 16 条
[11]  
NOWICKI RS, 1980, SOLID STATE TECHNOL, V23, P95
[12]   REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J].
PRETORIUS, R ;
HARRIS, JM ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1978, 21 (04) :667-&
[13]   SHALLOW PTSI-SI SCHOTTKY-BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUE [J].
TSAUR, BY ;
SILVERSMITH, DJ ;
MOUNTAIN, RW ;
HUNG, LS ;
LAU, SS ;
SHENG, TT .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5243-5246
[14]   REACTION OF MO THIN-FILMS ON SI (100) SURFACES [J].
YANAGISAWA, S ;
FUKUYAMA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1150-1156
[15]   OXIDATION MECHANISMS IN WSI2 THIN-FILMS [J].
ZIRINSKY, S ;
HAMMER, W ;
DHEURLE, F ;
BAGLIN, J .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :76-78
[16]  
1977, HDB CHEM PHYSICS