NON-UNIFORMITY OF SURFACE-STATE DENSITY IN THE CHANNEL OF CMOS TRANSISTORS

被引：3

作者：

BALLAND, B ^{[1
]}

PLOSSU, C ^{[1
]}

CHOQUET, C ^{[1
]}

LUBOWIECKI, V ^{[1
]}

LEDYS, JL ^{[1
]}

机构：

[1] MATRA HARRIS SEMICOND,CTR ELECTR,F-44075 NANTES,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1988年 / 23卷 / 11期

关键词：

D O I：

10.1051/rphysap:0198800230110183700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1837 / 1845

页数：9

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