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HETEROJUNCTION BIPOLAR-TRANSISTORS USING SI-GE ALLOYS

被引：307
作者：
IYER, SS
PATTON, GL
STORK, JMC
MEYERSON, BS
HARAME, DL
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,RES & DEV HIGH SPEED HETEROJUNCT DEVICE,YORKTOWN HTS,NY 10598
[2] IBM CORP,THOMAS J WATSON RES CTR,NEW MAT & STRUCT GRP,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期
关键词：
D O I：
10.1109/16.40887
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2043 / 2064
页数：22
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