DISILICIDE SOLID-SOLUTIONS, PHASE-DIAGRAM, AND RESISTIVITIES .1. TISI2-WSI2

被引：25

作者：

GAS, P ^{[1
]}

TARDY, FJ ^{[1
]}

DHEURLE, FM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：193 / 200

页数：8

共 20 条

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[6] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH [J].

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[7]

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[8] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

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[9] RESISTIVITY OF THE SOLID-SOLUTIONS (CO-NI)SI2 [J].

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[10]

DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

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