WHAT DIFFERENCE EXISTS IN THE STRUCTURE OF SIO2 AND GEO2 BETWEEN MELT-QUENCHED BULK GLASS AND SPUTTER-DEPOSITED AMORPHOUS FILM

[1] ANOMALOUS AMORPHOUS SIO2-FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (01) : 59 - 70

[2] STOICHIOMETRY AND ATOMIC DEFECTS IN RF-SPUTTERED SIO [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 317 - 323

[3] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 232 - &

[4] KOBAYASHI Y, 1983, THESIS TOHOKU U

[5] PRECISE MEASUREMENTS OF INFRARED-SPECTRA NEAR 9MUM OBTAINED FROM RF-SPUTTERED SILICON OXIDE (SIOX) FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (01) : 15 - +

[6] Misawa M., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P957

[7] PROPERTIES OF INSULATING THIN FILMS DEPOSITED BY RF SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (04) : 461 - &

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[9] TIME-OF-FLIGHT PULSED NEUTRON-DIFFRACTION OF LIQUIDS USING AN ELECTRON LINAC [J]. NUCLEAR INSTRUMENTS & METHODS, 1977, 147 (03): : 519 - 528

[10] UENO M, 1983, PHYSICA B & C, V120, P347, DOI 10.1016/0378-4363(83)90404-7

[1] ANOMALOUS AMORPHOUS SIO2-FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (01) : 59 - 70

[2] STOICHIOMETRY AND ATOMIC DEFECTS IN RF-SPUTTERED SIO [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 317 - 323

[3] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 232 - &

[4] KOBAYASHI Y, 1983, THESIS TOHOKU U

[5] PRECISE MEASUREMENTS OF INFRARED-SPECTRA NEAR 9MUM OBTAINED FROM RF-SPUTTERED SILICON OXIDE (SIOX) FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (01) : 15 - +

[6] Misawa M., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P957

[7] PROPERTIES OF INSULATING THIN FILMS DEPOSITED BY RF SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (04) : 461 - &

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[9] TIME-OF-FLIGHT PULSED NEUTRON-DIFFRACTION OF LIQUIDS USING AN ELECTRON LINAC [J]. NUCLEAR INSTRUMENTS & METHODS, 1977, 147 (03): : 519 - 528

[10] UENO M, 1983, PHYSICA B & C, V120, P347, DOI 10.1016/0378-4363(83)90404-7