RADIATION EFFECTS IN INP JFETS

被引：4

作者：

ANDERSON, WT

BOOS, JB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：4001 / 4004

页数：4

相关论文

共 7 条

[1] IONIZING-RADIATION EFFECTS IN INP MISFETS
ANDERSON, WT
DAVIS, GE
MATEER, JS
LILE, DL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1467 - 1470
[2] TRANSIENT RADIATION EFFECTS AT X-BAND IN GAAS-FETS AND ICS
ANDERSON, WT
BINARI, SC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4205 - 4208
[3] ANDERSON WT, 1985, IEEE NUCL S, V32
[4] PLANAR FULLY ION-IMPLANTED INP POWER JUNCTION FETS
BOOS, JB
BINARI, SC
KELNER, G
THOMPSON, PE
WENG, TH
PAPANICOLAOU, NA
HENRY, RL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 273 - 276
[5] BOOS JB, 1983, 1983 INT EL DEV M, P625
[6] IRRADIATED SILICON GATE MOS DEVICE BIAS ANNEALING
SCHWANK, JR
DAWES, WR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4100 - 4104
[7] TRANSIENT RADIATION STUDY OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IMPLANTED IN CR-DOPED AND UNDOPED SUBSTRATES
SIMONS, M
KING, EE
ANDERSON, WT
DAY, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6630 - 6636