THE TEMPERATURE-DEPENDENCE OF THE ANOMALOUS HALL-EFFECTS IN P-TYPE HGCDTE

被引：22

作者：

CHEN, MC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1571 / 1577

页数：7

共 36 条

[1]

BOVINA LA, 1976, SOV PHYS SEMICOND, V9, P1362

[2] ELECTRICAL-PROPERTIES OF NARROW GAP LOW CARRIER CONCENTRATION P-HG1-XCDXTE [J].

CAPORALETTI, O ;

MICKLETHWAITE, WFH .

PHYSICS LETTERS A, 1982, 89 (03) :151-153

[3] INVERTED SURFACE EFFECT OF P-TYPE HGCDTE [J].

CHEN, MC .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1836-1838

[4] ELECTRICAL-PROPERTIES OF ANTIMONY-DOPED P-TYPEHG0.78CD0.22TE LIQUID-PHASE-EPITAXY FILMS [J].

CHEN, MC ;

DODGE, JA .

SOLID STATE COMMUNICATIONS, 1986, 59 (07) :449-452

[5] INHOMOGENEITY MODEL FOR ANOMALOUS HALL-EFFECTS IN N-TYPE HG0.8CD0.2 TE LIQUID-PHASE-EPITAXY FILMS [J].

CHEN, MC ;

PARKER, SG ;

WEIRAUCH, DF .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3150-3153

[6] EFFECTS OF ANNEALING ON HG0.79CD0.21 TE EPILAYERS [J].

CHU, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5876-5879

[7] VARIABLE TEMPERATURE HALL-EFFECT ON P-HG1-XCDXTE GROWN ON CDTE AND SAPPHIRE SUBSTRATES BY LIQUID-PHASE EPITAXY [J].

EDWALL, DD ;

GERTNER, ER ;

TENNANT, WE .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) :245-268

[8] CARRIER TRANSPORT-PROPERTIES OF P-TYPE HG1-XCDXTE LIQUID-PHASE EPITAXIAL LAYERS IN THE MIXED CONDUCTION RANGE [J].

EGER, D ;

ZEMEL, A ;

MORDOWICZ, D ;

SHER, A .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :989-991

[9]

ELIZAROV AI, 1987, SOV PHYS SEMICOND+, V21, P292

[10]

ELIZAROV AI, 1984, SOV PHYS SEMICOND+, V18, P125

← 1 2 3 4 →