ROLE OF HG BONDING IN METAL/HG1-XCDX TE INTERFACE FORMATION

被引：15

作者：

FRIEDMAN, DJ ^{[1
]}

CAREY, GP ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

WILSON, JA ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93017

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：980 / 985

页数：6

共 29 条

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[8] INTERFACE CHEMISTRY OF TERNARY SEMICONDUCTORS - LOCAL MORPHOLOGY OF THE HG1-XCDXTE(110)-CR INTERFACE [J].

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[9]

FRIEDMAN DCS, UNPUB

[10] THE AG/(HG,CD)TE AND AL/(HG,CD)TE INTERFACES [J].

FRIEDMAN, DJ ;

CAREY, GP ;

SHIH, CK ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :1977-1982

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