SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF TI-W/NSI SCHOTTKY DIODES USING DEFECTS PARAMETERS EXTRACTED FROM DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：4

作者：

BAUZA, D

PANANAKAKIS, G

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs, Ecole Nationale Supérieure d'Electronique et de Radio Electricité de Grenoble, 38016 Grenoble

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.348532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The parameters of electrically active defects created during the technological fabrication process of Ti-W/nSi Schottky diodes are studied by deep level transient spectroscopy (DLTS). Using a self-consistent simulation model and trap parameters extracted from DLTS measurements, current-voltage characteristics of these diodes are simulated. It is found that a very satisfactory fitting can thus be obtained.

引用

页码：3357 / 3359

页数：3

共 12 条

[1] SCHOTTKY-BARRIER BEHAVIOR OF A TI-W ALLOY ON SI(100) [J].

ABOELFOTOH, MO .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2558-2565

[2] CHARACTERIZATION OF DEFECTS INTRODUCED DURING DC MAGNETRON SPUTTER DEPOSITION OF TI-W ON N-SI [J].

AURET, FD ;

NEL, M ;

BOJARCZUK, NA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1168-1174

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[4] CHARACTERIZATION OF INTERFACE STATES AT A AG-SI INTERFACE FROM CAPACITANCE MEASUREMENTS [J].

DENEUVILLE, A .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3079-3084

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[6] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

MULLINS, FH ;

BRUNNSCHWEILER, A .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :47-50

[7] INFLUENCE OF KINETIC AND ELECTROSTATIC PROPERTIES OF INTERFACE STATES ON THE EFFICIENCY OF A MIS TUNNEL SOLAR-CELL [J].

PANANAKAKIS, G ;

KAMARINOS, G ;

VIKTOROVITCH, P .

REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (05) :639-647

[8]

PANANAKAKIS G, 1986, P EUROPEAN PHYSICS S, V10, P168

[9] CHARACTERIZATION OF RF SPUTTER-DEPOSITED TI-W SCHOTTKY-BARRIER DIODES IN BORON-DOPED SILICON [J].

PAZ, O ;

AURET, FD ;

WHITE, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) :1712-1715

[10]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

← 1 2 →