NUCLEATION OF IN-SITU PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS DEPOSITED BY PYROLYSIS OF SI2H6 AND PH3

被引：7

作者：

KOBAYASHI, T ^{[1
]}

KOGUCHI, M ^{[1
]}

IIJIMA, S ^{[1
]}

OHKURA, M ^{[1
]}

WADA, Y ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 05期

关键词：

D O I：

10.1149/1.2054925

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Nucleation of in situ phosphorus-doped amorphous Si films deposited by pyrolysis of Si2H6 and PH3 is studied by scanning laser microscopy and transmission electron microscopy. The incubation time of the nucleation decreases as phosphorus concentration increases. The activation energy of the incubation time for nucleation, which corresponds to the activation energy of the self-diffusion coefficient of amorphous Si, is ca. 3.2 eV, independent of phosphorus concentration. The nucleation rate abruptly increases when the phosphorus concentration exceeds 4 x 10(20) cm-3. The activation energy of the nucleation rate decreases abruptly above the phosphorus concentration of 4 x 10(20) cm-3, which resulted from a reduction in the maximum free-energy change for the nucleation.

引用

页码：1365 / 1369

页数：5

共 22 条

[1] STUDY OF SI SELF-DIFFUSION BY NUCLEAR TECHNIQUES [J].