ION-BEAM AND LASER MIXING OF NICKEL OVERLAYERS ON SILICON-CARBIDE

被引：20

作者：

NARAYAN, J

FATHY, D

HOLLAND, OW

APPLETON, BR

DAVIS, RF

BECHER, PF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1577 / 1582

页数：6

共 7 条

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[3]

LAU SS, 1980, LASER ELECTRON BEAM, P511

[4] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J].

MATTESON, S ;

ROTH, J ;

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[5]

NARAYAN J, UNPUB

[6] THEORETICAL ASPECTS OF ATOMIC MIXING BY ION-BEAMS [J].

SIGMUND, P ;

GRASMARTI, A .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :25-41

[7] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

NARAYAN, J ;

YOUNG, RT .

SCIENCE, 1979, 204 (4392) :461-468

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