PHASE-TRANSFORMATIONS IN THE CR/A-SI SYSTEM DURING LOW-TEMPERATURE ANNEALING

被引：7

作者：

EDELMAN, F

CYTERMANN, C

BRENER, R

EIZENBERG, M

WEIL, R

BEYER, W

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, W-5170 JULICH 1, GERMANY

[2] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

[3] TECHNION ISRAEL INST TECHNOL, DEPT PHYS, IL-32000 HAIFA, ISRAEL

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80305-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Heat treatments in vacuum of Cr/a-Si:H, F structures lead to silicide formation at 450-600C. The presence of F in a-Si promotes the Cr silicide formation. The composition of the Cr silicides was found to depend on the relative thickness of the Cr and a-Si films. In the early stages of phase formation in the 400 angstrom Cr/500 angstrom a-Si system, with an atomic ratio of about 1:1 the first phases to appear were CrSi or CrSi2, then other silicide phases, Cr5Si3, and Cr3Si appeared. In the system with 1500 angstrom Cr/1-mu-m a-Si, with a surplus of Si, the dominant first phase was CrSi2, and then Cr3Si and Cr5Si3 appeared.

引用

页码：1063 / 1066

页数：4

共 15 条

[1] AN INVESTIGATION OF THE OPTICAL-CONSTANTS AND BAND-GAP OF CHROMIUM DISILICIDE [J].