SOLID-STATE INTERACTION BETWEEN THIN CHROMIUM FILMS AND SILICON - A COMPARISON BETWEEN AMORPHOUS AND SINGLE-CRYSTAL SILICON

被引：6

作者：

BOTHA, AP

KRITZINGER, S

PRETORIUS, R

机构：

[1] UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA

[2] CSIR,NATL ACCELERATOR CTR,VAN DE GRAAFF GRP,FAURE 7131,SOUTH AFRICA

来源：

THIN SOLID FILMS | 1983年 / 105卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90289-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：237 / 249

页数：13

共 22 条

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[7] FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY-BARRIER ON SI - ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SI [J].

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[10] SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON [J].

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