SOLID-STATE INTERACTION BETWEEN THIN CHROMIUM FILMS AND SILICON - A COMPARISON BETWEEN AMORPHOUS AND SINGLE-CRYSTAL SILICON

被引：6

作者：

BOTHA, AP

KRITZINGER, S

PRETORIUS, R

机构：

[1] UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA

[2] CSIR,NATL ACCELERATOR CTR,VAN DE GRAAFF GRP,FAURE 7131,SOUTH AFRICA

来源：

THIN SOLID FILMS | 1983年 / 105卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90289-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：237 / 249

页数：13

共 22 条

[11] THIN PALLADIUM SILICIDE CONTACTS TO SILICON [J].

KRITZINGER, S ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :305-310

[12]

KRITZINGER S, 1980, 7TH P EUR C EL MICR, V1, P356

[13]

KRITZINGER S, 1982, 10TH P INT C EL MICR, V2, P429

[14] SILICON SELF-DIFFUSION IN THIN SIO2 AND PTSI FILMS [J].

PRETORIUS, R ;

BOTHA, AP ;

LOMBAARD, JC .

THIN SOLID FILMS, 1981, 79 (01) :61-68

[15] RADIOACTIVE SILICON AS A MARKER IN THIN-FILM SILICIDE FORMATION [J].

PRETORIUS, R ;

RAMILLER, CL ;

LAU, SS ;

NICOLET, MA .

APPLIED PHYSICS LETTERS, 1977, 30 (10) :501-503

[16] RADIOACTIVE SI-31 MARKER STUDIES OF METAL SILICIDE FORMATION - COMPUTER-SIMULATION [J].

PRETORIUS, R ;

BOTHA, AP .

THIN SOLID FILMS, 1982, 91 (02) :99-109

[17] STUDIES OF THE GROWTH AND OXIDATION OF METAL-SILICIDES USING RADIOACTIVE SI-31 AS TRACER [J].

PRETORIUS, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :107-112

[18] MARKER STUDIES OF SILICIDE FORMATION, SILICON SELF-DIFFUSION AND SILICON EPITAXY USING RADIOACTIVE SILICON AND RUTHERFORD BACKSCATTERING [J].

PRETORIUS, R ;

RAMILLER, CL ;

NICOLET, MA .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :629-633

[19] COMPOUND FORMATION BETWEEN AMORPHOUS-SILICON AND CHROMIUM [J].

YACOBI, BG ;

SZADKOWSKI, AJ ;

ZUKOTYNSKI, S ;

CORBETT, JM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6424-6425

[20]

1955, ASTM60694 CARD

← 1 2 3 →