RADIOACTIVE SILICON AS A MARKER IN THIN-FILM SILICIDE FORMATION

被引：51

作者：

PRETORIUS, R ^{[1
]}

RAMILLER, CL ^{[1
]}

LAU, SS ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 10期

关键词：

D O I：

10.1063/1.89230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：501 / 503

页数：3

共 6 条

[1] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J].

CHU, WK ;

KRAUTLE, H ;

MAYER, JW ;

MULLER, H ;

NICOLET, MA ;

TU, KN .

APPLIED PHYSICS LETTERS, 1974, 25 (08) :454-457

[2] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[3] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[4] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J].

LAU, SS ;

FENG, JSY ;

OLOWOLAFE, JO ;

NICOLET, MA .

THIN SOLID FILMS, 1975, 25 (02) :415-422

[5] INFLUENCE OF NATURE OF SI SUBSTRATE ON NICKEL SILICIDE FORMED FROM THIN NI FILMS [J].

OLOWOLAFE, JO ;

NICOLET, MA ;

MAYER, JW .

THIN SOLID FILMS, 1976, 38 (02) :143-150

[6] STRUCTURE AND GROWTH KINETICS OF NI2SI ON SILICON [J].

TU, KN ;

CHU, WK ;

MAYER, JW .

THIN SOLID FILMS, 1975, 25 (02) :403-413

← 1 →