THE POST-HYDROGENATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON

被引：17

作者：

WIDMER, AE

FEHLMANN, R

MAGEE, CW

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1016/0022-3093(83)90065-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：199 / 205

页数：7

共 13 条

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[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].

CARLSON, DE ;

MAGEE, CW .

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CLARK, GJ ;

WHITE, CW ;

ALLRED, DD ;

APPLETON, BR ;

MAGEE, CW ;

CARLSON, DE .

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SPEAR, WE .

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[7] INVESTIGATION OF THE HYDROGEN AND IMPURITY CONTENTS OF AMORPHOUS-SILICON BY SECONDARY ION MASS-SPECTROMETRY [J].

MAGEE, C ;

CARLSON, DE .

SOLAR CELLS, 1980, 2 (04) :365-376

[8] HYDROGEN DEPTH PROFILING USING SIMS - PROBLEMS AND THEIR SOLUTIONS [J].

MAGEE, CW ;

BOTNICK, EM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01) :47-52

[9] AMORPHOUS SILICON AS A PASSIVANT FOR CRYSTALLINE SILICON [J].

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TARNG, ML .

APPLIED PHYSICS LETTERS, 1979, 34 (02) :156-157

[10]

ROSLER RS, 1977, SOLID STATE TECHNOL, V20, P63

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