IMPURITY SEGREGATION DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：11

作者：

BENSAHEL, D ^{[1
]}

AUVERT, G ^{[1
]}

PERIO, A ^{[1
]}

PFISTER, JC ^{[1
]}

IZRAEL, A ^{[1
]}

HENOC, P ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3485 / 3488

页数：4

共 14 条

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APPLIED PHYSICS LETTERS, 1981, 39 (09) :724-726

[2]

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[3]

Bensahel D., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P541

[4] THE EFFECT OF IMPLANTATION ON EXPLOSIVELY CRYSTALLIZED A-SI [J].

BENSAHEL, D ;

AUVERT, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :392-394

[5] A COMPARISON BETWEEN FURNACE AND CW LASER ANNEALING OF A-SI - EVIDENCE OF DIFFERENT CRYSTALLIZATION STATES [J].

BENSAHEL, D ;

AUVERT, G ;

PAULEAU, Y ;

PFISTER, JC .

REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (12) :783-786

[6] EXPLOSIVE CRYSTALLIZATION IN SINGLE-CRYSTAL SILICON AMORPHIZED BY IMPLANTATION [J].

BENSAHEL, D ;

AUVERT, G ;

DUPUY, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :395-397

[7]

BENSAHEL D, 1983, LASER ELECTRON BEAM

[8]

Gilmer G. H., 1980, LASER ELECTRON BEAM, P227

[9] OPTICAL-PROPERTIES OF HEAVILY DOPED SILICON BETWEEN 1.5 AND 4.1 EV [J].

JELLISON, GE ;

MODINE, FA ;

WHITE, CW ;

WOOD, RF ;

YOUNG, RT .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1414-1417

[10] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS [J].

KOSTER, U .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (02) :313-321

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