OPTICAL-PROPERTIES OF HEAVILY DOPED SILICON BETWEEN 1.5 AND 4.1 EV

被引：98

作者：

JELLISON, GE

MODINE, FA

WHITE, CW

WOOD, RF

YOUNG, RT

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.46.1414

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1414 / 1417

页数：4

共 14 条

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[9] MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES [J].

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