THE INFLUENCE OF SUBSTRATE-EPITAXIAL LAYER CHEMICAL-IMPURITIES ON HETEROSTRUCTURE ELECTRICAL CHARACTERISTICS

被引：9

作者：

GRAY, ML

EBERT, CW

机构：

[1] ATandT Bell Laboratories, Reading, PA 19612

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.350977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxial (MBE) layer heterostructures have been grown on GaAs wafers that received several different predeposition surface treatments. The electrical properties of the epitaxial structures have been correlated with the electrically active chemical impurities present at the substrate-epitaxial layer interface. Direct evidence has been found that relates the interface condition to the population of deep levels in the MBE structures. Photoreflectance modulation spectroscopy was used to qualitatively determine the electric field strengths of the epitaxial buffer layer regions.

引用

页码：3294 / 3299

页数：6

共 14 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2]

DEBRAY P, 1987, I PHYS C SER, V91, P231

[3]

GRAY M, UNPUB

[4] CONTROL OF SIDEGATING EFFECTS IN ALGAAS/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS BY MODIFICATION OF GAAS WAFER SURFACES [J].