MBE AS A PRODUCTION TECHNOLOGY FOR HEMT LSIS

被引:24
作者
KONDO, K
SAITO, J
IGARASHI, T
NANBU, K
ISHIKAWA, T
机构
关键词
D O I
10.1016/0022-0248(89)90408-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:309 / 316
页数:8
相关论文
共 48 条
[1]   RECENT ADVANCES IN ULTRA-HIGH-SPEED HEMT TECHNOLOGY [J].
ABE, M ;
MIMURA, T ;
NISHIUCHI, K ;
SHIBATOMI, A ;
KOBAYASHI, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1870-1879
[2]   ULTRAHIGH SPEED HIGH ELECTRON-MOBILITY TRANSISTOR LARGE-SCALE INTEGRATION TECHNOLOGY [J].
ABE, M ;
MIMURA, T ;
NOTOMI, S ;
ODANI, K ;
KONDO, K ;
KOBAYASHI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1387-1392
[3]  
ABE M, IN PRESS INTEGRATED, pCH4
[4]  
ABE M, 1988, IN PRESS FUJITSU SCI, V24
[5]  
ABE M, 1987, SEMICONDUCT SEMIMET, V24, P249
[6]   BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE [J].
ARNOLD, D ;
KLEM, J ;
HENDERSON, T ;
MORKOC, H ;
ERICKSON, LP .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :764-766
[7]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[8]   PERFORMANCE OF A QUARTER-MICROMETER-GATE BALLISTIC ELECTRON HEMT [J].
AWANO, Y ;
KOSUGI, M ;
MIMURA, T ;
ABE, M .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :451-453
[9]   MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J].
BACHRACH, RZ ;
KRUSOR, BS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :756-764
[10]   SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHAI, YG ;
CHOW, R .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798