GROWTH OF SILICON THIN-FILMS ON ERBIUM SILICIDE BY SOLID-PHASE EPITAXY

被引：12

作者：

VEUILLEN, JY ^{[1
]}

DANTERROCHES, C ^{[1
]}

TAN, TAN ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.355887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of the growth of thin (20-30 Angstrom) silicon overlayers on erbium silicide films epitaxially grown on Si(111), using the solid phase epitaxy technique under ultrahigh vacuum conditions was made. The silicon overlayers were characterized in situ by photoemission spectroscopy and low-energy electron diffraction for each annealing temperature. The structure of the films was analyzed (ex situ) by means of high resolution transmission microscopy. The Si overlayers are found to be essentially continuous and epitaxial after annealing at 600 degrees C. Electron microscopy reveals that defects are present in both the silicide and in the silicon films. The stability of thin silicon films has also been investigated.

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页码：223 / 226

页数：4

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