ELECTROCHEMICALLY ETCHED TUNNELS IN GALLIUM-ARSENIDE

被引：42

作者：

FAKTOR, MM ^{[1
]}

FIDDYMENT, DG ^{[1
]}

TAYLOR, MR ^{[1
]}

机构：

[1] PO RES DEPT,DOLLIS HILL,LONDON NW2 7DT,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 11期

关键词：

D O I：

10.1149/1.2134069

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1566 / 1567

页数：2

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