ION-BEAM-DEPOSITED FILMS FOR REFRACTORY-METAL TUNNEL-JUNCTIONS

被引：15

作者：

RUGGIERO, ST

FACE, DW

PROBER, DE

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1983年 / 19卷 / 03期

关键词：

D O I：

10.1109/TMAG.1983.1062371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：960 / 963

页数：4

共 18 条

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GAUTHERIN, G ;

AGIUS, B ;

RIGO, S .

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[2] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J].

BROOM, RF ;

RAIDER, SI ;

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WALTER, W .

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[3]

CELASCHI S, 1982, UNPUB P MATERIAL RES, P241

[4] INFLUENCE OF ELECTRONS-PER-ATOM RATIO AND PHONON FREQUENCIES ON SUPERCONDUCTING TRANSITION-TEMPERATURE OF LEAD ALLOYS [J].

DYNES, RC ;

ROWELL, JM .

PHYSICAL REVIEW B, 1975, 11 (05) :1884-1894

[5]

FACE DW, UNPUB J VAC SCI TECH

[6]

GURVITCH M, 1981, P INT ELECTRONIC DEV, P115

[7]

GURVITCH M, UNPUB APPL PHYS LETT

[8] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS [J].

HARPER, JME ;

CUOMO, JJ ;

KAUFMAN, HR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :737-756

[9] ION-IMPLANTATION DURING FILM GROWTH AND ITS EFFECT ON SUPERCONDUCTING PROPERTIES OF NIOBIUM [J].

HEIM, G ;

KAY, E .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :4006-4012

[10] SUPERCONDUCTIVITY OF NB3SN, NB, V, PB AND SN AFTER LOW-TEMPERATURE IRRADIATION WITH 25 MEV OXYGEN IONS [J].

ISCHENKO, G ;

KLAUMUNZER, S ;

NEUMULLER, H ;

ADRIAN, H ;

MULLER, P .

JOURNAL OF NUCLEAR MATERIALS, 1978, 72 (1-2) :212-224

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