PLASMA-ETCHING OF ITO THIN-FILMS USING A CH4/H2 GAS-MIXTURE

被引：44

作者：

MOHRI, M

KAKINUMA, H

SAKAMOTO, M

SAWAI, H

机构：

[1] Research Laboratory, Oki Electric Industry Co. Ltd, Tokyo, 193, Higashiasakawa 550-5, Hachioji-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

Activation energy; CH[!sub]4[!/sub]/H[!sub]2[!/sub]plasma; Desorption; Fine patterns; ITO films; Optoelectric devices; Plasma etching; Volatiles;

D O I：

10.1143/JJAP.29.L1932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasma etching of ITO (In2O3:Sn indium tin oxide) thin films has been performed using a CH4/H2plasma. Etching occurs above a substrate temperature (Ts) of 60°C and the etch rate increases with increasing Ts, while amorphous like or polymer-like carbon deposits onto the ITO films below 60°C. The apparent activation energy of the etching is 4.12 kcal/mol (0.18 eV). This small activation energy suggests that the desorption of produced volatiles is the rate-limiting process. Fine ITO patterns (1.5 µmL/S) were obtained using this gas mixture. © 1990 IOP Publishing Ltd.

引用

页码：L1932 / L1935

页数：4

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