INFLUENCE OF DEPOSITION CONDITIONS ON PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY RF GLOW-DISCHARGE

被引：19

作者：

NISHIKAWA, S

KAKINUMA, H

WATANABE, T

NIHEI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：639 / 645

页数：7

共 16 条

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