GENERATION AND ANNEALING OF DEFECTS IN SILICON DIOXIDE

被引：57

作者：

REISMAN, A

WILLIAMS, CK

MALDONADO, JR

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：868 / 874

页数：7

共 24 条

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[4] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
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[6] DEFECT STRUCTURE OF GLASSES - SOME OUTSTANDING QUESTIONS IN REGARD TO VITREOUS SILICA
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[7] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES
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[8] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499
[9] X-RAY-DAMAGE CONSIDERATIONS IN MOSFET DEVICES
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LEZEC, H
WILLIAMS, CK
IYER, SS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 628 - 631
[10] DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFETS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 96 - 103

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