NITROGEN IMPLANTATION FOR LOCAL INHIBITION OF OXIDATION

被引:6
作者
BERRUYER, P
BRUEL, M
机构
关键词
D O I
10.1063/1.97828
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:89 / 91
页数:3
相关论文
共 6 条
[1]  
DEROUXDAUPHIN P, 1984, THESIS U GRENOBLE
[2]   FORMATION AND BONDING STRUCTURE OF SILICON-NITRIDE BY 20-KEV N+ ION-IMPLANTATION [J].
HASEGAWA, S ;
ZALM, PC .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2539-2543
[3]   SELECTIVE OXIDATION TECHNOLOGIES FOR HIGH-DENSITY MOS [J].
HUI, J ;
CHIU, TY ;
WONG, S ;
OLDHAM, WG .
ELECTRON DEVICE LETTERS, 1981, 2 (10) :244-247
[4]  
HUI JCH, 1982, IEEE T ELECTRON DEV, V29, P554
[5]   CHARACTERIZATION OF IMPLANTED NITRIDE FOR VLSI APPLICATIONS [J].
KIM, MJ ;
GHEZZO, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) :1934-1941
[6]   THE OXIDATION OF SHAPED SILICON SURFACES [J].
MARCUS, RB ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1278-1282