OPTICAL POLARIZATION BISTABILITY WITH HIGH SWITCHING SPEED IN A TM WAVE INJECTED BURIED HETEROSTRUCTURE LASER

被引：13

作者：

MORI, Y

SHIBATA, J

KAJIWARA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1971 / 1973

页数：3

共 10 条

[1] A TENTATIVE ASSESSMENT OF SEMICONDUCTOR-LASER OPTICAL BISTABILITY [J].

ADAMS, MJ .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (01) :123-142

[2] A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS [J].

ADAMS, MJ ;

WESTLAKE, HJ ;

OMAHONY, MJ ;

HENNING, ID .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) :1498-1504

[3] POLARIZATION BISTABILITY IN SEMICONDUCTOR-LASERS [J].

CHEN, YC ;

LIU, JM .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :16-18

[4]

CHEN YC, 1987, OPTICAL FIBER COMMUN, P127

[5] OPTICAL INPUT AND OUTPUT CHARACTERISTICS FOR BISTABLE SEMICONDUCTOR-LASERS [J].

KAWAGUCHI, H .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :702-704

[6]

LIU JM, 1985, IEEE J QUANTUM ELECT, V21, P298

[7] OPERATION PRINCIPLE OF THE INGAASP/INP LASER TRANSISTOR [J].

MORI, Y ;

SHIBATA, J ;

SASAI, Y ;

SERIZAWA, H ;

KAJIWARA, T .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :649-651

[8]

MORI Y, 1986, 18TH C SOL STAT DEV, P723

[9] STATIC AND DYNAMIC PROPERTIES OF NONLINEAR SEMICONDUCTOR-LASER AMPLIFIERS [J].

OGASAWARA, N ;

ITO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09) :L739-L742

[10] MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SHIBATA, J ;

NAKAO, I ;

SASAI, Y ;

KIMURA, S ;

HASE, N ;

SERIZAWA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :191-193

← 1 →