SECONDARY ION MASS-SPECTROMETRY CHARACTERIZATION OF D2O AND H-2 O-18 STEAM OXIDATION OF SILICON

被引：7

作者：

MIKKELSEN, JC

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 03期

关键词：

D O I：

10.1007/BF02654688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：541 / 558

页数：18

共 28 条

[11] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :995-997

[12]

LEKO VK, 1977, FIZ KHIM STEKLA, V3, P219

[13] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].

LIGENZA, JR ;

SPITZER, WG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :131-136

[14] CHARACTERIZATION OF WET (D2O) THERMAL-OXIDATION OF SILICON BY SECONDARY ION MASS-SPECTROMETRY [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :601-603

[15] STEAM THERMAL SIO2 - PREPARATION AND RAMAN CHARACTERIZATION OF FREE-STANDING FILMS [J].

MIKKELSEN, JC ;

GALEENER, FL .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :712-714

[16] RAMAN CHARACTERIZATION OF HYDROXYL IN FUSED-SILICA AND THERMALLY GROWN SIO2 [J].

MIKKELSEN, JC ;

GALEENER, FL ;

MOSBY, WJ .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (04) :631-651

[17]

MIKKELSEN JC, UNPUB APPL PHYS LETT

[18] NETWORK OXYGEN-EXCHANGE DURING WATER DIFFUSION IN SIO2 [J].

PFEFFER, R ;

OHRING, M .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :777-784

[19]

PLISKIN WA, 1973, SEMICONDUCTOR SILICO, P506

[20] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON [J].

REVESZ, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :122-130

← 1 2 3 →