ADVANCES IN HG IMPLANTED HG1-XCDXTE PHOTOVOLTAIC DETECTORS

被引：28

作者：

FIORITO, G ^{[1
]}

GASPARRINI, G ^{[1
]}

SVELTO, F ^{[1
]}

机构：

[1] CTR INFORMAZIONI STUDI ESPERIENZE,SEGRATE,MILAN,ITALY

来源：

INFRARED PHYSICS | 1975年 / 15卷 / 04期

关键词：

D O I：

10.1016/0020-0891(75)90046-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：287 / 293

页数：7

共 15 条

[1] Donnelly J. P., 1973, Journal of Nonmetals, V1, P123
[2] PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT
DONNELLY, JP
CALAWA, AR
FOYT, AG
LINDLEY, WT
HARMAN, TC
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 403 - &
[3] PBS PHOTODIODES FABRICATED BY SB+ION IMPLANTATION
DONNELLY, JP
HARMAN, TC
FOYT, AG
LINDLEY, WT
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (04) : 529 - 534
[4] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION
DONNELLY, JP
LINDLEY, WT
FOYT, AG
HARMAN, TC
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 279 - &
[5] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT
DONNELLY, JP
HARMAN, TC
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 259 - &
[6] PHOTODIODES FABRICATED IN EPITAXIAL PBTE BY SB+ ION-IMPLANTATION
DONNELLY, JP
HOLLOWAY, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 682 - 683
[7] HG-IMPLANTED HG1-XCDXTE INFRARED PHOTOVOLTAIC DETECTORS IN 8- TO 14-MU-M RANGE
FIORITO, G
GASPARRINI, G
SVELTO, F
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 448 - 449
[8] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT
FOYT, AG
HARMAN, TC
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &
[9] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT
FOYT, AG
LINDLEY, WT
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 335 - &
[10] INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE
MARINE, J
MOTTE, C
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 450 - 452

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