FABRICATION OF MULTIPLE WAVELENGTH LASERS IN GAAS-ALGAAS STRUCTURES USING A ONE-STEP SPATIALLY CONTROLLED QUANTUM-WELL INTERMIXING TECHNIQUE

We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer, Bandgap tuned lasers were fabricated using this technique, Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.