PROCESS DEPENDENCE OF HOLE TRAPPING IN THIN NITRIDED SIO2-FILMS

[11] SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 929 - 934

[12] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478

[13] HYDROGENATION DURING THERMAL NITRIDATION OF SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2765 - 2772

[14] MOBILITY DEGRADATION OF NITRIDED OXIDE MISFETS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 166 - 172

[15] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[16] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2540 - 2546

[17] EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2042 - 2044

[18] ELECTRON AND HOLE TRAPS IN SIO2-FILMS THERMALLY GROWN ON SI SUBSTRATES IN ULTRA-DRY OXYGEN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2245 - 2252

[19] MOSLEHI MM, 1986, 5TH P INT S SIL MAT, P379

[20] STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5864 - 5879

[11] SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 929 - 934

[12] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478

[13] HYDROGENATION DURING THERMAL NITRIDATION OF SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2765 - 2772

[14] MOBILITY DEGRADATION OF NITRIDED OXIDE MISFETS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 166 - 172

[15] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[16] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2540 - 2546

[17] EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2042 - 2044

[18] ELECTRON AND HOLE TRAPS IN SIO2-FILMS THERMALLY GROWN ON SI SUBSTRATES IN ULTRA-DRY OXYGEN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2245 - 2252

[19] MOSLEHI MM, 1986, 5TH P INT S SIL MAT, P379

[20] STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5864 - 5879