SEQUENTIAL TUNNELING AND MAGNETICALLY ENHANCED BISTABILITY IN DOUBLE BARRIER RESONANT-TUNNELING STRUCTURES

被引：10

作者：

LEADBEATER, ML ^{[1
]}

EAVES, L ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

PHYSICA SCRIPTA | 1991年 / T35卷

关键词：

D O I：

10.1088/0031-8949/1991/T35/045

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A brief overview of resonant tunnelling is given. It is shown that the resonant buildup of electron space charge can be enhanced in appropriately designed devices to give intrinsic bistability in the I(V) characteristics. Evidence is provided for the sequential model of resonant tunnelling. At high magnetic fields, the intrinsic bistability effect is greatly enhanced due to the high density of states available in a Landau level.

引用

页码：215 / 220

页数：6

共 25 条

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