TOTAL DOSE RADIATION EFFECTS ON CMOS RING OSCILLATORS OPERATING DURING IRRADIATION

被引：13

作者：

HATANO, H ^{[1
]}

SHIBUYA, M ^{[1
]}

机构：

[1] TOSHIBA CORP,DIV INTEGRATED CIRCUITS,KAWASAKI 210,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 12期

关键词：

D O I：

10.1109/EDL.1983.25793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：435 / 437

页数：3

共 8 条

[1] SOS DEVICE RADIATION EFFECTS AND HARDENING [J].

BUCHANAN, BL ;

NEAMEN, DA ;

SHEDD, WM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :959-970

[2] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156

[3] EFFECT OF A FLOATING SUBSTRATE ON OPERATION OF SILICON-ON-SAPPHIRE TRANSISTORS [J].

EATON, SS ;

LALEVIC, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :907-912

[4] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J].

FREEMAN, R ;

HOLMESSIEDLE, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1216-1225

[5]

Hatano H., 1981, International Electron Devices Meeting, P359

[6] RADIATION HARD CMOS-SOS STANDARD CELL CIRCUITS [J].

PALKUTI, LJ ;

PRYOR, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1715-1719

[7] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J].

TIHANYI, J ;

SCHLOTTERER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1017-1023

[8] HIGH-PERFORMANCE RADIATION HARD CMOS-SOS TECHNOLOGY [J].

YUAN, JH ;

HARARI, E .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2199-2204

← 1 →