CALCULATION OF THE REFRACTIVE-INDEXES OF LEAD CHALCOGENIDE SALTS AND ITS APPLICATION FOR INJECTION-LASERS

被引：19

作者：

SHANI, Y

ROSMAN, R

KATZIR, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 01期

关键词：

D O I：

10.1109/JQE.1985.1072527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：51 / 62

页数：12

共 38 条

[1] GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS [J].

ANDERSON, WW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) :532-543

[2] A REVIEW OF SEMICONDUCTOR PROPERTIES OF PBTE, PBSE, PBS AND PBO [J].

DALVEN, R .

INFRARED PHYSICS, 1969, 9 (04) :141-+

[3]

DIMMOCK JD, 1977, PHYSICS SEMIMETALS N, P319

[4] OPTICAL PROPERTIES OF SOME PB1-XSNXTE ALLOYS DETERMINED FROM INFRARED PLASMA REFLECTIVITY MEASUREMENTS [J].

DIONNE, G ;

WOOLLEY, JC .

PHYSICAL REVIEW B, 1972, 6 (10) :3898-&

[5] ELECTRIC-SUSCEPTIBILITY HOLE MASS OF LEAD TELLURIDE [J].

DIXON, JR ;

RIEDL, HR .

PHYSICAL REVIEW, 1965, 138 (3A) :A873-&

[6]

DIXON JR, 1965, PHYS REV, V140, P1283

[7] FUNDAMENTAL LINEWIDTH IN SOLITARY, ULTRANARROW OUTPUT PBS1-XSEX DIODE-LASERS [J].

FREED, C ;

BIELINSKI, JW ;

LO, W .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :629-631

[8] ENERGY-GAP REFRACTIVE-INDEX INTERRELATION [J].

GOPAL, V .

INFRARED PHYSICS, 1982, 22 (05) :255-257

[9] PROPERTIES OF DIFFUSED PBSNSE HOMOJUNCTION DIODE-LASERS [J].

GRISAR, R ;

RIEDEL, WJ ;

PREIER, HM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :586-592

[10] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].

HENRY, CH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264

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